IAUC100N04S6N028ATMA1 vs IAUC100N04S6N015ATMA1 比較
詳細な並列比較: IAUC100N04S6N028ATMA1 メーカー: Infineon および IAUC100N04S6N015ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUC100N04S6N028ATMA1 | IAUC100N04S6N015ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.42 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel Trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | 1.5 mΩ (typical, per Infineon product page) |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| 動作温度範囲 | -55 °C to +175 °C | -55 C to +175 C (junction, typical) |
| パッケージ | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 (SSO8) 5x6 mm |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| RoHS ステータス | Compliant | — |
| Product Family | — | OptiMOS-6 40V |
| Continuous Drain Current (I_D @ T_C=25C) | — | 100 A |
| Power Dissipation (P_D @ T_C=25C) | — | 100 W |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| MSLレベル | — | 1 (unlimited floor life) |
| Automotive Qualification | — | AEC-Q101 |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |