IAUC100N04S6N028ATMA1 vs IAUC100N04S6N015ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6N028ATMA1 by Infineon and IAUC100N04S6N015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 βœ“ Active
Infineon
IAUC100N04S6N015ATMA1

IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N04S6N028ATMA1 IAUC100N04S6N015ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 40V β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) N-Channel Trench MOSFET
Drain-Source Voltage (V_DS) 40 V 40 V
Continuous Drain Current (I_D) at T_C=25Β°C 100 A β€”
Pulsed Drain Current (I_DM) 400 A β€”
R_DS(on) max @ V_GS=10V 2.8 mΞ© (typical) 1.5 mΞ© (typical, per Infineon product page)
Gate Threshold Voltage (V_GS(th)) 1.5 V to 2.5 V β€”
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g in nC] β€”
Power Dissipation (P_D) at T_C=25Β°C 62 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55 C to +175 C (junction, typical)
Package PG-TDSON-8 (TDSON-8) PG-TDSON-8 (SSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes β€”
RoHS Status Compliant β€”
Product Family β€” OptiMOS-6 40V
Continuous Drain Current (I_D @ T_C=25C) β€” 100 A
Power Dissipation (P_D @ T_C=25C) β€” 100 W
Gate-Source Voltage (V_GS) max β€” Β±20 V
MSL Level β€” 1 (unlimited floor life)
Automotive Qualification β€” AEC-Q101
RoHS Compliance β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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