IAUC100N08S5N043ATMA1 vs BSC042NE7NS3GATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N08S5N043ATMA1 von Infineon und BSC042NE7NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUC100N08S5N043ATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,72 | $1,24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | IAUC / OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET (Enhancement Mode) | N-Channel MOSFET |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 100 A (package limited) | — |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W | — |
| Maximum R<sub>DS(on)</sub> | 4.3 mΩ | — |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | — |
| Betriebstemperaturbereich | -55°C to +175°C | -55C to +150C |
| Gehäuse | PG-TDSON-8-34 (SuperSO8) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 3 |
| Channel Mode | Enhancement | — |
| Part Number | — | BSC042NE7NS3GATMA1 |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| MSL-Level | — | 1 |
| RoHS-Status | — | Compliant |