IAUC100N08S5N043ATMA1 vs BSC042NE7NS3GATMA1 对比

详细并排对比 IAUC100N08S5N043ATMA1 出自 Infineon 和 BSC042NE7NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 ✓ 量产中
Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ 量产中

规格对比

参数 IAUC100N08S5N043ATMA1 BSC042NE7NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.72 $1.24
Manufacturer Infineon Technologies Infineon Technologies
Part Series IAUC / OptiMOS 5 —
晶体管类型 N-Channel MOSFET (Enhancement Mode) N-Channel MOSFET
Maximum Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 100 A (package limited) —
Continuous Drain Current (chip-limited) 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W —
Maximum R<sub>DS(on)</sub> 4.3 mΩ —
Maximum Power Dissipation (P<sub>D</sub>) 125 W (T<sub>C</sub>) —
工作温度范围 -55°C to +175°C -55C to +150C
封装 PG-TDSON-8-34 (SuperSO8) PG-TDSON-8-1 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
湿敏等级(MSL) MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Technology OptiMOS 5 (Trench) OptiMOS 3
Channel Mode Enhancement —
Part Number — BSC042NE7NS3GATMA1
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at Ta — 19 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10V — 4.2 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) typ — 1.7 V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 125 W
MSL 等级 — 1
RoHS 状态 — Compliant

数据手册与资源

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