IAUC120N04S6N010ATMA1 vs IAUCN04S7L042GATMA1 Vergleich

Detaillierter Direktvergleich von IAUC120N04S6N010ATMA1 von Infineon und IAUCN04S7L042GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC120N04S6N010ATMA1 IAUCN04S7L042GATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,68 $0,86
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 40 V —
Continuous Drain Current (Id, Tc) 150 A —
Power Dissipation (Pd, Tc) 150 W —
RDS(on) at VGS=10V (typ) 1.0 mΩ —
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΩ —
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 µA) —
Technology OptiMOS 6 Trench N-Channel MOSFET
Gehäuse PG-TDSON-8-34 (5x6 mm leadless) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Montageart Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Automotive Qualification AEC-Q101 —
Betriebstemperaturbereich -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) -55C to +175C (Tj)
MSL-Level 1 (per JEDEC J-STD-020, per Infineon TDSON family) 1
RoHS-Status Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec —
Polarity Single N-channel —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern