IAUC120N04S6N010ATMA1 vs IAUCN04S7L042GATMA1 Comparison

Detailed side-by-side comparison of IAUC120N04S6N010ATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC120N04S6N010ATMA1 IAUCN04S7L042GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.86
FET Type N-Channel β€”
Drain-Source Voltage (V(BR)DSS) 40 V β€”
Continuous Drain Current (Id, Tc) 150 A β€”
Power Dissipation (Pd, Tc) 150 W β€”
RDS(on) at VGS=10V (typ) 1.0 mΞ© β€”
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΞ© β€”
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 Β΅A) β€”
Technology OptiMOS 6 Trench N-Channel MOSFET
Package PG-TDSON-8-34 (5x6 mm leadless) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Mounting Type Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Automotive Qualification AEC-Q101 β€”
Operating Temperature Range -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) -55C to +175C (Tj)
MSL Level 1 (per JEDEC J-STD-020, per Infineon TDSON family) 1
RoHS Status Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec β€”
Polarity Single N-channel β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7 40V
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tj) β€” 77 A
Maximum Power Dissipation (PD, Tc) β€” 50 W
Polarity / Channel Type β€” N-Channel enhancement mode
Automotive Qualified β€” Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing β€” Tape & Reel (per -ATMA1 suffix)
Target Substrate β€” IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg β€” [DATA_NEEDED: Qg @ VGS=10V]

Datasheets & Resources

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