IAUC120N06S5L015ATMA1 vs IAUC100N10S5L040ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC120N06S5L015ATMA1 von Infineon und IAUC100N10S5L040ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC120N06S5L015ATMA1 IAUC100N10S5L040ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $1,94
Technology N-Channel MOSFET (OptiMOS 5) —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W —
Betriebstemperaturbereich -55C to +175C (Tj) -55 C to +175 C (junction)
Gehäuse PG-TDSON-8-43 (Surface Mount) PG-TDSON-8-34 (SuperSO8 5x6 mm)
Montageart Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Gate-Source Voltage (VGS) max ±20 V —
RoHS-Status Compliant —
MSL-Level [DATA_NEEDED: MSL level] —
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Part Family — OptiMOST 5 Power-Transistor (IAUC)
Transistortyp — N-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 400 A
On-State Resistance RDS(on) max — 4 mOhm
Gate Threshold Voltage VGS(th) — Logic Level
Continuous Power Dissipation (Tc) — 167 W
MSL Moisture Sensitivity — MSL1 (up to 260 C peak reflow)
Avalanche Tested — 100% production avalanche tested
AOI Compatibility — Feasible for automatic optical inspection

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