IAUC120N06S5L015ATMA1 vs IAUC100N10S5L040ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L015ATMA1 por Infineon y IAUC100N10S5L040ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActivoInfineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5L015ATMA1 | IAUC100N10S5L040ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $1,94 |
| Technology | N-Channel MOSFET (OptiMOS 5) | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) | -55 C to +175 C (junction) |
| Encapsulado | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-34 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOST 5 Power-Transistor (IAUC) |
| Tipo de transistor | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| On-State Resistance RDS(on) max | — | 4 mOhm |
| Gate Threshold Voltage VGS(th) | — | Logic Level |
| Continuous Power Dissipation (Tc) | — | 167 W |
| MSL Moisture Sensitivity | — | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | — | 100% production avalanche tested |
| AOI Compatibility | — | Feasible for automatic optical inspection |