IAUC60N04S6L039ATMA1 vs BSC032N04LSATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N04S6L039ATMA1 von Infineon und BSC032N04LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUC60N04S6L039ATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,72 | $0,32 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 6 (trench) | OptiMOS 5 trench |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | — |
| Pulsed Drain Current (I_DM) | 240 A | — |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P_D) | 42 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55°C to +175°C |
| Gehäuse | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 5 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 98 A |
| RDS(on) max at VGS=10V | — | 3.2 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Lead-Free | — | Yes |