IAUC60N04S6N031HATMA1 vs IAUC120N04S6L012ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N04S6N031HATMA1 von Infineon und IAUC120N04S6L012ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ AktivInfineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC60N04S6N031HATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,95 | $1,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | OptiMOS 6 40V |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (Tj) | -55 °C to +175 °C (junction) |
| Gehäuse | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | — | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD) at TC | — | 115 W |
| Delivery Form | — | Tape & Reel |