IAUC60N04S6N031HATMA1 vs IAUZN04S7L030ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC60N04S6N031HATMA1 von Infineon und IAUZN04S7L030ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC60N04S6N031HATMA1 IAUZN04S7L030ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,95 $0,36
Manufacturer Infineon Technologies —
Part Family IAUC (Integrated Automotive Half-Bridge) —
Process Technology OptiMOS 6 40V —
Configuration Half-Bridge (2 N-Channel MOSFETs) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 60 A —
Power Dissipation (P_D, Tc=25C) 75 W —
R_DS(on) at VGS=10V 3.1 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
Betriebstemperaturbereich -55 °C to +175 °C (Tj) —
Gehäuse PG-TDSON-8-56 (5 mm x 6 mm) PG-TSDSON-8-44 (S3O8) 3x3 mm²
Montageart Surface Mount Surface Mount
Pin-Anzahl 8 —
Automotive Qualification AEC-Q101 AEC-Q101 (Automotive OptiMOS)
RoHS-Status Compliant —
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C) — 60 A
Pulsed Drain Current (IDM, Tj) — 100 A
On-State Resistance (RDS(on), VGS=10V max) — 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD, Tc=25°C) — 58 W
Operating Junction Temperature (Tj) — -55C to +175C
Technology Family — OptiMOS-7
Channel Type — N-Channel
RoHS Compliance — Compliant

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern