IAUC60N04S6N031HATMA1 vs IAUZN04S7L030ATMA1 对比

详细并排对比 IAUC60N04S6N031HATMA1 出自 Infineon 和 IAUZN04S7L030ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ 量产中
Infineon
IAUZN04S7L030ATMA1 IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 ✓ 量产中

规格对比

参数 IAUC60N04S6N031HATMA1 IAUZN04S7L030ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.36
Manufacturer Infineon Technologies —
Part Family IAUC (Integrated Automotive Half-Bridge) —
Process Technology OptiMOS 6 40V —
Configuration Half-Bridge (2 N-Channel MOSFETs) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 60 A —
Power Dissipation (P_D, Tc=25C) 75 W —
R_DS(on) at VGS=10V 3.1 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
工作温度范围 -55 °C to +175 °C (Tj) —
封装 PG-TDSON-8-56 (5 mm x 6 mm) PG-TSDSON-8-44 (S3O8) 3x3 mm²
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Automotive Qualification AEC-Q101 AEC-Q101 (Automotive OptiMOS)
RoHS 状态 Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C) — 60 A
Pulsed Drain Current (IDM, Tj) — 100 A
On-State Resistance (RDS(on), VGS=10V max) — 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD, Tc=25°C) — 58 W
Operating Junction Temperature (Tj) — -55C to +175C
Technology Family — OptiMOS-7
Channel Type — N-Channel
RoHS Compliance — Compliant

数据手册与资源

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