IAUC60N06S5L073ATMA1 vs IAUCN04S7L006ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N06S5L073ATMA1 von Infineon und IAUCN04S7L006ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUC60N06S5L073ATMA1 | IAUCN04S7L006ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $1,38 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| Gehäuse | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-43 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C | -55 °C to +175 °C |
| Technology | Trench (OptiMOS 5) | OptiMOS-7 trench |
| Anzahl der Pins | 8 | — |
| Configuration | Single N-Channel | — |
| Qualification | AEC-Q101 automotive grade | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max | — | 0.6 mΩ at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| Automotive Qualified | — | Yes (AEC-Q101) |
| Pin-Anzahl | — | 8 |
| Packaging | — | Tape and Reel (ATMA1) |
| Polarity | — | Single N-Channel |