IAUC60N10S5L110ATMA1 vs IPB35N10S3L26ATMA2 Vergleich

Detaillierter Direktvergleich von IAUC60N10S5L110ATMA1 von Infineon und IPB35N10S3L26ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC60N10S5L110ATMA1 IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 ✓ Aktiv
Infineon
IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC60N10S5L110ATMA1 IPB35N10S3L26ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,66 $0,48
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™-5 —
Transistortyp N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>, Tc) 60 A —
Power Dissipation (P<sub>D</sub>, Tc) 88 W —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 11 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 1.2 V —
Gehäuse PG-TDSON-8-33 (TDSON-8 Single) PG-TO263-3-2 (D2PAK)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: min/max operating temperature] -55C to +175C
Gate-Source Voltage (V<sub>GS</sub>) Max [DATA_NEEDED: VGS max rating] —
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Qg at specified Vgs] —
Avalanche Energy (E<sub>AS</sub>) [DATA_NEEDED: single-pulse avalanche energy] —
Lead-Free / RoHS Yes (RoHS compliant per LCSC listing) —
Packing Code ATMA1 (Tape & Reel) —
MSL-Level 1 (per LCSC datasheet snippet) —
Halogenfrei Yes (per Infineon product classification) —
Customer Info / FGR J52 (per Infineon product data) —
Product Family — OptiMOS Power-Transistor
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tc — 35 A
Gepulster Drain-Strom — 180 A
Power Dissipation (Pd) at Tc — 71 W
RDS(on) (typical) — 26.3 mOhm
Anzahl der Pins — 3
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
RoHS-Status — Compliant
Automotive Qualified — Yes (per Infineon product page classification)

Datenblätter & Ressourcen

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