IAUC60N10S5L110ATMA1 vs IPB35N10S3L26ATMA2 对比
详细并排对比 IAUC60N10S5L110ATMA1 出自 Infineon 和 IPB35N10S3L26ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC60N10S5L110ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.66 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™-5 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| 封装 | PG-TDSON-8-33 (TDSON-8 Single) | PG-TO263-3-2 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: min/max operating temperature] | -55C to +175C |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| MSL 等级 | 1 (per LCSC datasheet snippet) | — |
| 无卤 | Yes (per Infineon product classification) | — |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Product Family | — | OptiMOS Power-Transistor |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| 脉冲漏极电流 | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| 引脚数 | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| RoHS 状态 | — | Compliant |
| Automotive Qualified | — | Yes (per Infineon product page classification) |