IAUC64N08S5L075ATMA1 vs BSC123N08NS3GATMA1 Vergleich
Detaillierter Direktvergleich von IAUC64N08S5L075ATMA1 von Infineon und BSC123N08NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUC64N08S5L075ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55C to +150C |
| Gehäuse | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Anzahl der Pins | 8 | — |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| RoHS-Status | — | Compliant with exemption |
| Automotive Qualified | — | Yes (AEC-Q101) |