IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
Teilenummer: IAUC64N08S5L075ATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.05 | $1,05 |
| 10 | $0.92 | $9,20 |
| 100 | $0.78 | $78,00 |
| 500 | $0.71 | $355,00 |
| 1.000 | $0.65 | $650,00 |
| 5.000 | $0.58 | $2.900,00 |
IAUC64N08S5L075ATMA1 Übersicht
What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled three-terminal discrete semiconductor that uses an insulated gate to modulate conduction between source and drain. Power MOSFETs of this type belong to the broader hierarchy of discrete semiconductors → transistors → MOSFETs → power MOSFETs → N-channel MOSFETs, and they serve as the fundamental switching element in modern DC-DC converters, motor drives, and load switches.
Key features include a 7.5 mΩ maximum on-resistance at VGS = 10 V, a low gate charge (Qg) optimized for high-frequency switching, and an avalanche-rated single-pulse body diode. The device supports operation up to VDS = 80 V and offers a thermally efficient exposed-pad package that minimizes junction-to-case thermal resistance, enabling high-current handling in automotive and industrial environments.
The OptiMOS™ 5 technology uses an advanced trench structure that reduces conduction losses by up to 30% compared to previous OptiMOS generations while improving switching performance. The combination of low RDS(on), low Qg, and small package footprint makes the IAUC64N08S5L075ATMA1 particularly well suited to high-density synchronous rectifiers and ORing FET applications.
Typical applications include automotive 48 V systems, electric power steering (EPS), brushless DC (BLDC) motor drives, LED lighting drivers, and high-current load switches. The AEC-Q101 qualification makes it suitable for under-hood automotive environments where reliability over wide temperature ranges is critical.
When designing with this MOSFET, ensure the gate-drive voltage reaches the full 10 V enhancement level to achieve the specified RDS(on) and consider using a gate-driver IC with sufficient peak current to switch Qg quickly. The exposed pad must be soldered to a sufficient copper area to keep the junction temperature within safe limits.
This page synthesizes distributor pricing, drop-in alternatives sourced from manufacturer cross-reference data, and practical design notes not found in the manufacturer datasheet — including parametric comparisons and PCB layout guidance specific to the PG-TDSON-8-33 footprint.
Drop-in-Alternativen für IAUC64N08S5L075ATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IAUC64N08S5L075ATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, MSL Level, Operating Junction Temperature, Operating Temperature Range.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IAUC80N08S5L070ATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IAUC45N08S5L150ATMA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IAUC100N04S6L014ATMA1
✅ Drop-In✓ Auf Lager
$0.72 / Stück
Datenblatt ansehen →NVMFS7N08CT1G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSC123N08NS3GATMA1
✅ Drop-In✓ Auf Lager
$0.71 / Stück
Datenblatt ansehen →IAUC64N08S5L075ATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 |
| Transistortyp | N-Channel MOSFET |
| Technology | OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ |
| Power Dissipation (PD) at TC=25°C | 75 W |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C |
| Gehäuse | PG-TDSON-8-33 (5x6 mm) |
| Montageart | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Compliant |
| MSL-Level | MSL1 (per JEDEC J-STD-020) |
| Anzahl der Pins | 8 |
IAUC64N08S5L075ATMA1 Pin-Konfiguration
| Pin 1 | S — Source (connected to exposed pad) |
| Pin 2 | S — Source (connected to exposed pad) |
| Pin 3 | S — Source (connected to exposed pad) |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Sicherer Arbeitsbereich (DC, TC=25°C)
Typische Anwendungen
IAUC64N08S5L075ATMA1 ist geeignet für 6 Anwendungs: 48V Mild-Hybrid Automotive Systems, Electric Power Steering (EPS) Motor Drive, BLDC Motor Drive (Automotive and Industrial), High-Current LED Lighting Drivers (Automotive Headlamps), High-Current Load Switch / ORing FET, Synchronous Rectifier in Isolated DC-DC Converters.
48V Mild-Hybrid Automotive Systems
The IAUC64N08S5L075ATMA1 fits 48V mild-hybrid power architectures thanks to its 80V VDS rating (66% headroom over a 48V nominal rail) and 7.5 mΩ max RDS(on). The low on-resistance reduces conduction losses in high-current 48V bus switches and DC-DC converters interfacing between 48V and 12V domains. The AEC-Q101 qualification and 175°C junction temperature rating ensure reliable operation in under-hood environments. Compared with discrete silicon MOSFETs of earlier generations, the OptiMOS 5 process cuts switching losses by ~30%, enabling higher switching frequencies and smaller magnetics in 48V-to-12V buck converters up to several kW.
Empfohlen
Electric Power Steering (EPS) Motor Drive
In EPS applications the IAUC64N08S5L075ATMA1 serves as the synchronous-rectifier low-side FET in a three-phase BLDC inverter steering the assist motor. The 64A continuous drain current easily handles the 30-50A peak currents typical of column-assist EPS systems, while the 7.5 mΩ RDS(on) keeps conduction losses below 5W at peak torque. The PG-TDSON-8-33 footprint enables compact PCB integration next to the motor control MCU, and AEC-Q101 qualification satisfies the strict automotive reliability requirements for safety-critical steering subsystems.
Empfohlen
BLDC Motor Drive (Automotive and Industrial)
The IAUC64N08S5L075ATMA1 is well matched to three-phase BLDC motor drives up to ~3 kW thanks to its 80V rating (covers 24V and 48V bus systems) and 7.5 mΩ RDS(on). Used as the low-side synchronous-rectifier FET in each phase leg, it minimizes body-diode conduction losses during commutation. The low gate charge of the OptiMOS 5 family supports PWM frequencies up to 50 kHz without excessive driver losses. The exposed thermal pad of the PG-TDSON-8-33 package allows direct PCB heatsinking to keep junction temperature below 150°C at full motor stall current.
Empfohlen
High-Current LED Lighting Drivers (Automotive Headlamps)
The IAUC64N08S5L075ATMA1 works as the main switching FET in automotive LED headlamp driver stages where load currents reach 5-15A per string. Its 80V rating handles the inductive kick from the buck-converter power stage, while 7.5 mΩ RDS(on) keeps switch conduction loss below 1W even at the upper end of the current range. The OptiMOS 5 process enables switching frequencies above 200 kHz, allowing smaller inductors and a more compact driver PCB that fits inside the headlamp housing. AEC-Q101 qualification and operation to +175°C TJ support under-hood mounting.
Empfohlen
High-Current Load Switch / ORing FET
In redundant power-supply ORing and load-disconnect applications the IAUC64N08S5L075ATMA1 acts as the main pass-FET. Its 7.5 mΩ RDS(on) minimizes voltage drop in the powered path — at 30A continuous the drop is only 225 mV — reducing dissipation and eliminating the need for paralleled devices. The 80V VDS rating provides margin against load-dump transients on 12V/24V automotive buses. The PG-TDSON-8-33 footprint simplifies PCB layout, and the part's low Qg allows fast turn-off for inrush-current limiting during hot-plug events.
Empfohlen
Synchronous Rectifier in Isolated DC-DC Converters
The IAUC64N08S5L075ATMA1 serves as the synchronous rectifier FET on the secondary side of isolated 24V/48V-to-low-voltage DC-DC converters. Its 80V VDS rating covers rectified 24V or 48V rails with substantial safety margin, while 7.5 mΩ RDS(on) reduces secondary-side conduction loss and improves overall converter efficiency by 1-2% versus higher-RDS(on) alternatives. The OptiMOS 5 low Qrr body diode reduces dead-time losses, allowing higher switching frequencies (100-300 kHz) and smaller magnetic components. The PG-TDSON-8-33 package fits on the secondary-side PCB alongside the output inductor.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IAUC64N08S5L075ATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IAUC80N08S5L070ATMA1 | IAUC45N08S5L150ATMA1 | IAUC100N04S6L014ATMA1 | NVMFS7N08CT1G | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same | SO-8FL (5x6 mm) - same footprint class | PG-TDSON-8-33 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 40 V | 80 V | 80 V |
| On-Resistance (RDS(on)) max | 7.5 mΩ | 7.0 mΩ | 15 mΩ | 1.4 mΩ | 7.0 mΩ | 12.3 mΩ |
| Continuous Drain Current (ID) | 64 A | 80 A | 45 A | 100 A | 60 A | 50 A |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | onsemi Trench | OptiMOS 3 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Approx. Unit Price (qty 1000) | $0.65 | $0.78 | $0.45 | $1.10 | $0.72 | $0.42 |
Wichtigste Unterscheidungsmerkmale
- Lowest RDS(on) in 80V N-channel OptiMOS 5 family (vs. IAUC45N08S5L150ATMA1)
- Higher VDS rating for 48V automotive systems (vs. IAUC100N04S6L014ATMA1)
- OptiMOS 5 process for 30% lower switching loss vs older generations (vs. BSC123N08NS3GATMA1)
- Infineon OEM support and long-term automotive supply (vs. NVMFS7N08CT1G (onsemi))
Designhinweise
Estimated: at ID=30A continuous and RDS(on)=7.5 mΩ (at TJ=25°C), conduction loss is P=I²R=6.75 W. Using the published thermal resistance of the PG-TDSON-8-33 on a 4-layer 2s2p FR4 PCB (JEDEC JESD51-5-7), the junction-to-ambient thermal resistance is approximately 50°C/W. Without a heatsink, this produces a 50×6.75 ≈ 338°C temperature rise, far exceeding the 175°C limit. Either derate current to ~15A or mount on a copper-pour area of at least 1 sq inch (6 cm²) on the top and bottom layers to bring θJA down to 35-40°C/W, keeping Tj well within safe limits at 30A.
The exposed thermal pad (EP) of the PG-TDSON-8-33 must be soldered directly to a copper pour on the top layer and connected via multiple thermal vias to inner/outer copper planes to maximize heat spreading. Source pins 1-3 should be tied to a small copper island that connects to the EP for best switching performance; gate pin 4 should have a Kelvin-source connection if used at high dV/dt. Place the gate-driver IC within 5 mm of the gate pin to minimize gate-loop inductance and prevent parasitic ringing that could exceed VGS ratings.
Do not drive the gate with less than 10V — at VGS=4.5V the RDS(on) can be 2-3× higher than spec, dramatically increasing conduction loss and potentially causing thermal runaway. Use a dedicated gate-driver IC (not a logic GPIO) capable of sourcing/sinking at least 1A peak gate current to switch the gate charge quickly. Do not exceed the avalanche energy rating during turn-off of inductive loads; add a TVS diode or RC snubber if the application involves relays or motors. Finally, verify the part is sourced from authorized distributors to avoid counterfeit parts that may lack AEC-Q101 screening.
Compliance-Informationen
AEC-Q101 qualified (automotive MOSFET standard). RoHS and REACH compliant per Infineon product page. Lead-free (Pb-free) reflow soldering compatible. MSL1 per JEDEC J-STD-020. Halogen-free. Conflict-minerals compliant per Infineon CMRT filings.
