IAUC64N08S5L075ATMA1 vs BSC123N08NS3GATMA1 비교

다음의 상세 나란히 비교: IAUC64N08S5L075ATMA1 제조: Infineon 및 BSC123N08NS3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 ✓ 활성

사양 비교

파라미터 IAUC64N08S5L075ATMA1 BSC123N08NS3GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.58 $0.71
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUC64N08S5L075ATMA1 —
트랜지스터 유형 N-Channel MOSFET —
Technology OptiMOS™ 5 —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC=25°C 64 A (TJ-limited) —
On-Resistance (RDS(on)) max at VGS=10V 7.5 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage absolute maximum] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg]
Power Dissipation (PD) at TC=25°C 75 W —
동작 접합 온도 -55 °C to +175 °C -55C to +150C
패키지 PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
MSL 레벨 MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
핀 수 8 —
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Power Dissipation (Tc) — 66 W
Power Dissipation (Ta) — 2.5 W
RoHS 상태 — Compliant with exemption
Automotive Qualified — Yes (AEC-Q101)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청