IAUCN04S7L006ATMA1 vs IAUC100N04S6L020ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L006ATMA1 von Infineon und IAUC100N04S6L020ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7L006ATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,38 | $0,86 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 °C to +175 °C (TJ) |
| Gehäuse | PG-TDSON-8-43 | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS-7 trench | OptiMOS 6 |
| Automotive Qualified | Yes (AEC-Q101) | — |
| RoHS-Status | Compliant | Compliant |
| Pin-Anzahl | 8 | — |
| Packaging | Tape and Reel (ATMA1) | Tape & Reel (TMA1) |
| Polarity | Single N-Channel | — |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| Qualification | — | Automotive grade |