IAUCN04S7L028ATMA1 vs IAUCN04S7L042GATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L028ATMA1 von Infineon und IAUCN04S7L042GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7L028ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 100 A | — |
| On-State Resistance (RDS(on)) max | 2.80 mOhm at VGS=10 V | — |
| On-State Resistance (RDS(on)) | 2.82 mOhm at VGS=10 V (JLCPCB reported) | — |
| Gate-Source Threshold (VGS(th)) | 1.8 V (typ) | — |
| Gate Charge (Qg) | 24 nC at VGS=10 V | — |
| Input Capacitance (Ciss) | 1.578 nF | — |
| Output Capacitance (Coss) | 788 pF | — |
| Reverse Transfer Capacitance (Crss) | 36 pF | — |
| Verlustleistung (Ptot) | 58 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TDSON-8-33 (TDSON-8 EP) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Montageart | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Automotive Qualification | AEC-Q101 | — |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 7 40V |
| Technology | — | Trench N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Betriebstemperaturbereich | — | -55C to +175C (Tj) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| MSL-Level | — | 1 |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |