IAUCN04S7N009ATMA1 vs BSZ110N08NS5ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N009ATMA1 von Infineon und BSZ110N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN04S7N009ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $0,44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 N-Channel Power MOSFET |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Gehäuse | PG-TDSON-8-34 (Surface Mount) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL-Level | 1 | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | Compliant |
| Configuration | Single N-Channel | Single MOSFET |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Part Family | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| On-Resistance RDS(on) max | — | 11 mΩ |
| Power Dissipation (PD) at Tc | — | 50 W |
| Polarity | — | N-Channel |
| Gate Drive Voltage (VGS) | — | [DATA_NEEDED: VGS rating] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |