IAUCN04S7N015GATMA1 vs IAUCN04S6N013TATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N015GATMA1 von Infineon und IAUCN04S6N013TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7N015GATMA1 | IAUCN04S6N013TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,21 | $1,66 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 165 A (Tc) | — |
| Power Dissipation (P_D) | 96 W (Tc) | — |
| R_DS(on) max | 1.53 mΩ at V_GS=10 V | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Gehäuse | PG-THSOG-4-1 (SSO4G 5x6) surface mount | PG-LHDSO-10-1 (SSO10T) |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55 °C to +175 °C |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| RoHS-Status | Compliant | Compliant |
| Montageart | Surface Mount (IMS-compatible source-down) | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 230 A at T<sub>C</sub> |
| R<sub>DS(on)</sub> (max) | — | 1.32 mΩ at V<sub>GS</sub> = 10 V |
| Power Dissipation (P<sub>D</sub>) | — | 133 W at T<sub>C</sub> |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 2.6 V (typ) |
| Total Gate Charge (Q<sub>g</sub>) | — | 52 nC at V<sub>GS</sub> = 10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.08 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.7 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 51 pF |