IAUCN04S7N015GATMA1 vs IAUCN04S6N013TATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N015GATMA1 by Infineon and IAUCN04S6N013TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N015GATMA1 | IAUCN04S6N013TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $1.66 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D) | 165 A (Tc) | β |
| Power Dissipation (P_D) | 96 W (Tc) | β |
| R_DS(on) max | 1.53 mΞ© at V_GS=10 V | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Package | PG-THSOG-4-1 (SSO4G 5x6) surface mount | PG-LHDSO-10-1 (SSO10T) |
| Operating Junction Temperature | -55C to +175C | -55 Β°C to +175 Β°C |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | β |
| RoHS Status | Compliant | Compliant |
| Mounting Type | Surface Mount (IMS-compatible source-down) | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | β | 230 A at T<sub>C</sub> |
| R<sub>DS(on)</sub> (max) | β | 1.32 mΞ© at V<sub>GS</sub> = 10 V |
| Power Dissipation (P<sub>D</sub>) | β | 133 W at T<sub>C</sub> |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | 2.6 V (typ) |
| Total Gate Charge (Q<sub>g</sub>) | β | 52 nC at V<sub>GS</sub> = 10 V |
| Input Capacitance (C<sub>iss</sub>) | β | 1.08 nF |
| Output Capacitance (C<sub>oss</sub>) | β | 3.7 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | β | 51 pF |