IAUCN04S7N056DATMA1 vs IAUC120N04S6N010ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N056DATMA1 von Infineon und IAUC120N04S6N010ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7N056DATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $0,68 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUCN04S7N056DATMA1 | — |
| Series | OptiMOS 5 40V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 60 A (Tj) | — |
| RDS(on) (typ) | 5.59 mΩ | — |
| Power Dissipation (Pd) | 41 W (Tc) | — |
| Betriebstemperaturbereich | -55°C to +175°C | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Gehäuse | PG-TDSON-8-61 (TDSON EP, 5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 6 |
| RoHS-Status | Compliant | Compliant |
| Packaging Type | Tape & Reel | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| MSL-Level | — | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |