IAUCN04S7N056DATMA1 vs IAUC120N04S6N010ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N056DATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N056DATMA1

IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΞ© | Infineon

IAUCN04S7N056DATMA1 βœ“ Active
Infineon
IAUC120N04S6N010ATMA1

IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N056DATMA1 IAUC120N04S6N010ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.68
Manufacturer Infineon Technologies β€”
Part Number IAUCN04S7N056DATMA1 β€”
Series OptiMOS 5 40V β€”
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) 60 A (Tj) β€”
RDS(on) (typ) 5.59 mΞ© β€”
Power Dissipation (Pd) 41 W (Tc) β€”
Operating Temperature Range -55Β°C to +175Β°C -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family)
Package PG-TDSON-8-61 (TDSON EP, 5x6 mm) PG-TDSON-8-34 (5x6 mm leadless)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
Technology OptiMOS 5 trench MOSFET OptiMOS 6
RoHS Status Compliant Compliant
Packaging Type Tape & Reel β€”
FET Type β€” N-Channel
Drain-Source Voltage (V(BR)DSS) β€” 40 V
Continuous Drain Current (Id, Tc) β€” 150 A
Power Dissipation (Pd, Tc) β€” 150 W
RDS(on) at VGS=10V (typ) β€” 1.0 mΞ©
RDS(on) at VGS=10V (max per LCSC excerpt) β€” 1.03 mΞ©
Gate-Source Threshold (VGS(th), typ) β€” 3 V (at 90 Β΅A)
MSL Level β€” 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Gate Drive Recommendation β€” 10 V VGS for full RDS(on) spec
Polarity β€” Single N-channel

Datasheets & Resources

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