IAUCN08S7L033ATMA1 vs BSZ0904NSIATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7L033ATMA1 von Infineon und BSZ0904NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN08S7L033ATMA1 | BSZ0904NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Series | Automotive OptiMOS 7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | [DATA_NEEDED: VGS max rating] |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | -55C to +150C |
| Gehäuse | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | JEDEC qualified for target applications |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS (N-channel power MOSFET) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020, typical for this package) | — |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=4.5V | — | 4 mOhm |
| On-State Resistance RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Power Dissipation at Ta | — | 2.1 W |
| Power Dissipation at Tc | — | 37 W |
| Integrated Schottky-like Diode | — | Yes (monolithic) |
| Avalanche Rated | — | 100% avalanche tested |
| Lead Plating | — | Pb-free |
| Halogenfrei | — | Yes |