IAUCN08S7L033ATMA1 vs BSZ0904NSIATMA1 비교
다음의 상세 나란히 비교: IAUCN08S7L033ATMA1 제조: Infineon 및 BSZ0904NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN08S7L033ATMA1 | BSZ0904NSIATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.86 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Series | Automotive OptiMOS 7 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | [DATA_NEEDED: VGS max rating] |
| 동작 온도 범위 | -55°C to +175°C (TJ) | -55C to +150C |
| 패키지 | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| 실장 유형 | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | JEDEC qualified for target applications |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS (N-channel power MOSFET) |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 (per JEDEC J-STD-020, typical for this package) | — |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=4.5V | — | 4 mOhm |
| On-State Resistance RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Power Dissipation at Ta | — | 2.1 W |
| Power Dissipation at Tc | — | 37 W |
| Integrated Schottky-like Diode | — | Yes (monolithic) |
| Avalanche Rated | — | 100% avalanche tested |
| Lead Plating | — | Pb-free |
| 할로겐 프리 | — | Yes |