IAUCN08S7L033ATMA1 vs BSZ0904NSIATMA1 Comparaison
Comparaison détaillée côte à côte de IAUCN08S7L033ATMA1 par Infineon et BSZ0904NSIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IAUCN08S7L033ATMA1 | BSZ0904NSIATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,86 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Series | Automotive OptiMOS 7 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | [DATA_NEEDED: VGS max rating] |
| Plage de température de fonctionnement | -55°C to +175°C (TJ) | -55C to +150C |
| Boîtier | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| Type de montage | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | JEDEC qualified for target applications |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS (N-channel power MOSFET) |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 (per JEDEC J-STD-020, typical for this package) | — |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=4.5V | — | 4 mOhm |
| On-State Resistance RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Power Dissipation at Ta | — | 2.1 W |
| Power Dissipation at Tc | — | 37 W |
| Integrated Schottky-like Diode | — | Yes (monolithic) |
| Avalanche Rated | — | 100% avalanche tested |
| Lead Plating | — | Pb-free |
| Sans halogène | — | Yes |