IAUCN08S7N036TATMA1 vs IAUCN04S7N037GATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7N036TATMA1 von Infineon und IAUCN04S7N037GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN08S7N036TATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 80 V | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| Continuous Drain Current (I_D) | 129 A | — |
| R_DS(on) max @ V_GS=10V | 3.60 mΩ | — |
| Power Dissipation (P_D) | 118 W (T_C = 25 °C) | — |
| Input Capacitance (C_iss) | 3120 pF (typ) | — |
| Output Capacitance (C_oss) | 1280 pF (typ) | — |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) | — |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) | — |
| Rise Time (t_r) | 8 ns (typ) | — |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) | — |
| Fall Time (t_f) | 8 ns (typ) | — |
| Gehäuse | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Cooling | Top-side cooled | — |
| Montageart | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS-Status | Compliant | Compliant |
| Series | — | OptiMOS 7 |
| Technology | — | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |