IAUCN08S7N036TATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N036TATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N036TATMA1
IAUCN08S7N036TATMA1 - 80V, 3.6mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N036TATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (V_DS) | 80 V | β |
| Gate-Source Voltage (V_GS) | Β±20 V | β |
| Continuous Drain Current (I_D) | 129 A | β |
| R_DS(on) max @ V_GS=10V | 3.60 mΞ© | β |
| Power Dissipation (P_D) | 118 W (T_C = 25 Β°C) | β |
| Input Capacitance (C_iss) | 3120 pF (typ) | β |
| Output Capacitance (C_oss) | 1280 pF (typ) | β |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) | β |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) | β |
| Rise Time (t_r) | 8 ns (typ) | β |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) | β |
| Fall Time (t_f) | 8 ns (typ) | β |
| Package | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Cooling | Top-side cooled | β |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 7 |
| Technology | β | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Operating Temperature Range | β | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |