IAUCN08S7N036TATMA1 vs IAUCN04S7N037GATMA1 对比

详细并排对比 IAUCN08S7N036TATMA1 出自 Infineon 和 IAUCN04S7N037GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7N036TATMA1 IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon

IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon

IAUCN08S7N036TATMA1 ✓ 量产中
Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7N036TATMA1 IAUCN04S7N037GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.05 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Polarity N-Channel —
Drain-Source Voltage (V_DS) 80 V —
Gate-Source Voltage (V_GS) ±20 V —
Continuous Drain Current (I_D) 129 A —
R_DS(on) max @ V_GS=10V 3.60 mΩ —
Power Dissipation (P_D) 118 W (T_C = 25 °C) —
Input Capacitance (C_iss) 3120 pF (typ) —
Output Capacitance (C_oss) 1280 pF (typ) —
Reverse Transfer Capacitance (C_rss) 23 pF (max) —
Turn-on Delay Time (t_d(on)) 14 ns (typ) —
Rise Time (t_r) 8 ns (typ) —
Turn-off Delay Time (t_d(off)) 17 ns (typ) —
Fall Time (t_f) 8 ns (typ) —
封装 PG-LHDSO-10-1 (SSO10T, 5x7 mm) SSO4G 5x6 mm² (PG-THSOG-4-1)
Cooling Top-side cooled —
安装类型 Surface Mount Surface Mount (IMS substrate attach compatible)
Automotive Qualification AEC-Q101 AEC-Q101
RoHS 状态 Compliant Compliant
Series — OptiMOS 7
Technology — Trench MOSFET, N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
MSL 等级 — [DATA_NEEDED: MSL level]
工作温度范围 — [DATA_NEEDED: junction/ambient temperature limits]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

数据手册与资源

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