IAUCN08S7N036TATMA1 vs IQE036N08NM6CGATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7N036TATMA1 von Infineon und IQE036N08NM6CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN08S7N036TATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 6 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 80 V | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| Continuous Drain Current (I_D) | 129 A | — |
| R_DS(on) max @ V_GS=10V | 3.60 mΩ | — |
| Power Dissipation (P_D) | 118 W (T_C = 25 °C) | — |
| Input Capacitance (C_iss) | 3120 pF (typ) | — |
| Output Capacitance (C_oss) | 1280 pF (typ) | — |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) | — |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) | — |
| Rise Time (t_r) | 8 ns (typ) | — |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) | — |
| Fall Time (t_f) | 8 ns (typ) | — |
| Gehäuse | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Cooling | Top-side cooled | — |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS-Status | Compliant | Compliant |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Betriebstemperaturbereich | — | -55 C to +175 C (junction, Tj) |
| MSL-Level | — | MSL1 (per JEDEC J-STD-020) |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| Configuration | — | Single N-channel, Source-Down |