IAUCN08S7N036TATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N036TATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N036TATMA1
IAUCN08S7N036TATMA1 - 80V, 3.6mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N036TATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 6 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (V_DS) | 80 V | β |
| Gate-Source Voltage (V_GS) | Β±20 V | β |
| Continuous Drain Current (I_D) | 129 A | β |
| R_DS(on) max @ V_GS=10V | 3.60 mΞ© | β |
| Power Dissipation (P_D) | 118 W (T_C = 25 Β°C) | β |
| Input Capacitance (C_iss) | 3120 pF (typ) | β |
| Output Capacitance (C_oss) | 1280 pF (typ) | β |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) | β |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) | β |
| Rise Time (t_r) | 8 ns (typ) | β |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) | β |
| Fall Time (t_f) | 8 ns (typ) | β |
| Package | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Cooling | Top-side cooled | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| Operating Temperature Range | β | -55 C to +175 C (junction, Tj) |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |
| Technology | β | Trench MOSFET, OptiMOS 6 |
| Configuration | β | Single N-channel, Source-Down |