IAUCN08S7N036TATMA1 vs IQE036N08NM6CGATMA1 Comparación
Comparación detallada lado a lado de IAUCN08S7N036TATMA1 por Infineon y IQE036N08NM6CGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN08S7N036TATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,05 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 6 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 80 V | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| Continuous Drain Current (I_D) | 129 A | — |
| R_DS(on) max @ V_GS=10V | 3.60 mΩ | — |
| Power Dissipation (P_D) | 118 W (T_C = 25 °C) | — |
| Input Capacitance (C_iss) | 3120 pF (typ) | — |
| Output Capacitance (C_oss) | 1280 pF (typ) | — |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) | — |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) | — |
| Rise Time (t_r) | 8 ns (typ) | — |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) | — |
| Fall Time (t_f) | 8 ns (typ) | — |
| Encapsulado | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Cooling | Top-side cooled | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Estado RoHS | Compliant | Compliant |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C (junction, Tj) |
| Nivel MSL | — | MSL1 (per JEDEC J-STD-020) |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| Configuration | — | Single N-channel, Source-Down |