IAUCN10S7L180ATMA1 vs IAUCN10S7L290TATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN10S7L180ATMA1 von Infineon und IAUCN10S7L290TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN10S7L180ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Number of Channels | 1 | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tj) | 39 A | — |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΩ @ VGS=10 V | — |
| Typical RDS(on) | 18 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V (±16 V per JLCPCB listing) | — |
| Total Gate Charge (Qg) | 11 nC | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | 272 pF | — |
| Output Capacitance (Coss) | 668 pF | — |
| Reverse Transfer Capacitance (Crss) | 7 pF | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55 °C to +175 °C |
| Gehäuse | PG-TDSON-8-34 (Surface Mount) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| RoHS-Status | EU RoHS Compliant with Exemption | — |
| Configuration | Single Quad Drain Triple Source | — |
| Channel Mode | Enhancement | — |
| Part Status | Active | — |
| Product Family | — | OptiMOS™ 7 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Automotive Qualification | — | AEC-Q100 qualified |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |