IAUCN10S7L180ATMA1 vs IAUCN10S7L290TATMA1 Comparação
Comparação detalhada lado a lado de IAUCN10S7L180ATMA1 por Infineon e IAUCN10S7L290TATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUCN10S7L180ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,58 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Number of Channels | 1 | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tj) | 39 A | — |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΩ @ VGS=10 V | — |
| Typical RDS(on) | 18 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V (±16 V per JLCPCB listing) | — |
| Total Gate Charge (Qg) | 11 nC | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | 272 pF | — |
| Output Capacitance (Coss) | 668 pF | — |
| Reverse Transfer Capacitance (Crss) | 7 pF | — |
| Temperatura de junção de operação | -55 °C to +175 °C | -55 °C to +175 °C |
| Encapsulamento | PG-TDSON-8-34 (Surface Mount) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Tipo de montagem | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| Status RoHS | EU RoHS Compliant with Exemption | — |
| Configuration | Single Quad Drain Triple Source | — |
| Channel Mode | Enhancement | — |
| Part Status | Active | — |
| Product Family | — | OptiMOS™ 7 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Automotive Qualification | — | AEC-Q100 qualified |
| Nível MSL | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |