IAUCN10S7L180ATMA1 vs IAUCN10S7L290TATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L180ATMA1 by Infineon and IAUCN10S7L290TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L180ATMA1
IAUCN10S7L180ATMA1 - 100V 39A 18mΞ© Automotive MOSFET | Infineon
IAUCN10S7L180ATMA1 β ActiveInfineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7L180ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Number of Channels | 1 | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tj) | 39 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 58 W | β |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΞ© @ VGS=10 V | β |
| Typical RDS(on) | 18 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V (Β±16 V per JLCPCB listing) | β |
| Total Gate Charge (Qg) | 11 nC | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | 272 pF | β |
| Output Capacitance (Coss) | 668 pF | β |
| Reverse Transfer Capacitance (Crss) | 7 pF | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | β |
| RoHS Status | EU RoHS Compliant with Exemption | β |
| Configuration | Single Quad Drain Triple Source | β |
| Channel Mode | Enhancement | β |
| Part Status | Active | β |
| Product Family | β | OptiMOSβ’ 7 |
| Drain-Source Voltage (VDS) | β | 100 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25Β°C | β | 27 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | β | 28.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25Β°C | β | 45 W |
| Automotive Qualification | β | AEC-Q100 qualified |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | β | Compliant |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |
| ESD Protection | β | HBM Class 1C (per Infineon datasheet) |