IAUT165N08S5N029ATMA2 vs IPB100N04S4H2ATMA1 Vergleich
Detaillierter Direktvergleich von IAUT165N08S5N029ATMA2 von Infineon und IPB100N04S4H2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
IAUT165N08S5N029ATMA2 ✓ AktivInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUT165N08S5N029ATMA2 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,30 | $1,42 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUT165N08S5N029ATMA2 | — |
| Product Family | OptiMOS™ 5 | — |
| Transistortyp | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 165 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | 660 A | — |
| On-Resistance (R<sub>DS(on)</sub>) | 2.9 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 167 W | — |
| Avalanche Energy (E<sub>AS</sub>) | 225 mJ | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (T<sub>j</sub>) | — |
| Gehäuse / Bauform | PG-HSOF-8-1 (8+Tab, Surface Mount) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL Rating | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 qualified |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant (Green Product) |
| Avalanche Tested | 100% Avalanche Tested | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Gehäuse | — | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| MSL-Level | — | MSL1 (up to 260C peak reflow) |
| Avalanche Energy (EAS) | — | 100% avalanche tested |