IAUT165N08S5N029ATMA2 vs IPB100N04S4H2ATMA1 Comparison
Detailed side-by-side comparison of IAUT165N08S5N029ATMA2 by Infineon and IPB100N04S4H2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT165N08S5N029ATMA2
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΞ© N-Ch OptiMOS 5 | Infineon
IAUT165N08S5N029ATMA2 β ActiveInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveSpecification Comparison
| Parameter | IAUT165N08S5N029ATMA2 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $1.42 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IAUT165N08S5N029ATMA2 | β |
| Product Family | OptiMOSβ’ 5 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 165 A | β |
| Pulsed Drain Current (I<sub>DM</sub>) | 660 A | β |
| On-Resistance (R<sub>DS(on)</sub>) | 2.9 mΞ© (typical) | β |
| Power Dissipation (P<sub>D</sub>, Tc) | 167 W | β |
| Avalanche Energy (E<sub>AS</sub>) | 225 mJ | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (T<sub>j</sub>) | β |
| Package / Case | PG-HSOF-8-1 (8+Tab, Surface Mount) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Rating | MSL1 (up to 260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 qualified |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant (Green Product) |
| Avalanche Tested | 100% Avalanche Tested | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Technology | β | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | β | 2.4 mΞ© typical |
| Maximum Power Dissition (PD) at TC=25C | β | 115 W |
| Operating Junction Temperature | β | -55C to +175C |
| Storage Temperature | β | [DATA_NEEDED: storage temp range] |
| Package | β | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| MSL Level | β | MSL1 (up to 260C peak reflow) |
| Avalanche Energy (EAS) | β | 100% avalanche tested |