IAUT300N08S5N014ATMA1 vs IPB60R280P7ATMA1 Vergleich
Detaillierter Direktvergleich von IAUT300N08S5N014ATMA1 von Infineon und IPB60R280P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUT300N08S5N014ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,05 | $0,88 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 300 A (DC) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) Max | ±20 V (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation PD @ TC=25°C | 300 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 °C / 85 % RH) | — |
| Peak Reflow Temperature | 260 °C | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per Infineon datasheet) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Technology Family | OptiMOS 5 (Infineon) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 (600 V) |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | Superjunction (SJ) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Betriebstemperaturbereich | — | -55 °C to +150 °C (T_j max) |
| Configuration | — | Single N-Channel |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |