IAUT300N08S5N014ATMA1 vs IPB60R280P7ATMA1 Comparison
Detailed side-by-side comparison of IAUT300N08S5N014ATMA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N014ATMA1
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 β Active
Specification Comparison
| Parameter | IAUT300N08S5N014ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.05 | $0.88 |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 300 A (DC) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) Max | Β±20 V (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| Power Dissipation PD @ TC=25Β°C | 300 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at β€30 Β°C / 85 % RH) | β |
| Peak Reflow Temperature | 260 Β°C | β |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100 % (per Infineon datasheet) | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Technology Family | OptiMOS 5 (Infineon) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS P7 (600 V) |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | Superjunction (SJ) |
| Drain-Source Voltage (V_DSS) | β | 600 V |
| Continuous Drain Current (I_D, T_C=25Β°C) | β | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | β | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | β | 3.5 V |
| Power Dissipation P_D (T_C=25Β°C) | β | 53 W |
| Pin Count | β | 3 (2 + Tab) |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (T_j max) |
| Configuration | β | Single N-Channel |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Generation | β | 7th Gen CoolMOS (successor to P6) |