IAUTN04S7N003ATMA1 vs IAUCN04S7N015GATMA1 Vergleich
Detaillierter Direktvergleich von IAUTN04S7N003ATMA1 von Infineon und IAUCN04S7N015GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUTN04S7N003ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,42 | $2,21 |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| Power Dissipation (PD) at Tc=25°C | 357 W | — |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | — |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) | — |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) | — |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | — |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | — |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (Tj) | — |
| Gehäuse | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Montageart | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |