IAUTN04S7N003ATMA1 vs IAUCN04S7N015GATMA1 Comparison
Detailed side-by-side comparison of IAUTN04S7N003ATMA1 by Infineon and IAUCN04S7N015GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN04S7N003ATMA1
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 β ActiveInfineon
IAUCN04S7N015GATMA1
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
IAUCN04S7N015GATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN04S7N003ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.42 | $2.21 |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tj | 350 A | β |
| Power Dissipation (PD) at Tc=25Β°C | 357 W | β |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | β |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 Β°C) | β |
| Body Diode Pulse Current | 3510 A (tp = 100 Β΅s, Tj = 25 Β°C) | β |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | β |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | β |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | β |
| Package | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 165 A (Tc) |
| Power Dissipation (P_D) | β | 96 W (Tc) |
| R_DS(on) max | β | 1.53 mΞ© at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Operating Junction Temperature | β | -55C to +175C |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |