IAUZ30N06S5L140ATMA1 vs BSC014N06NSATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ30N06S5L140ATMA1 von Infineon und BSC014N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUZ30N06S5L140ATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,96 | $0,89 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A (Tj) | — |
| Power Dissipation (PD, Tc) | 33 W | — |
| RDS(on) Max @ VGS=10 V | 14 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.2 V (typ) | — |
| Total Gate Charge (Qg) | 12.2 nC @ VGS=10 V | — |
| Output Capacitance (Coss) | 888 pF @ VDS=30 V | — |
| Gehäuse | PG-TSDSON-8-32 (S3O8, 3x3 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Technology Family | OptiMOS 5 | — |
| Automotive Grade | AEC-Q101 qualified | — |
| Gate-Source Voltage Max | ±20 V | — |
| Lead-Free / RoHS | Yes (RoHS compliant) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |
| Betriebstemperaturbereich | — | -55C to +150C |
| MSL-Level | — | 1 |
| RoHS-Status | — | Compliant |
| Technology | — | OptiMOS 5 (shielded-gate trench) |