IAUZ30N06S5L140ATMA1 vs BSC014N06NSATMA1 对比
详细并排对比 IAUZ30N06S5L140ATMA1 出自 Infineon 和 BSC014N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUZ30N06S5L140ATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.96 | $0.89 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A (Tj) | — |
| Power Dissipation (PD, Tc) | 33 W | — |
| RDS(on) Max @ VGS=10 V | 14 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.2 V (typ) | — |
| Total Gate Charge (Qg) | 12.2 nC @ VGS=10 V | — |
| Output Capacitance (Coss) | 888 pF @ VDS=30 V | — |
| 封装 | PG-TSDSON-8-32 (S3O8, 3x3 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55°C to +175°C | — |
| Technology Family | OptiMOS 5 | — |
| Automotive Grade | AEC-Q101 qualified | — |
| Gate-Source Voltage Max | ±20 V | — |
| Lead-Free / RoHS | Yes (RoHS compliant) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| 晶体管类型 | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |
| 工作温度范围 | — | -55C to +150C |
| MSL 等级 | — | 1 |
| RoHS 状态 | — | Compliant |
| Technology | — | OptiMOS 5 (shielded-gate trench) |