IAUZ30N10S5L240ATMA1 vs IAUC100N08S5N043ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ30N10S5L240ATMA1 von Infineon und IAUC100N08S5N043ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ AktivInfineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ30N10S5L240ATMA1 | IAUC100N08S5N043ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $1,72 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| R_DS(on) max at V_GS=10V | 24 mΩ | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | — |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | — |
| Power Dissipation (P_D, Tc) | 45.5 W | — |
| Gehäuse | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | PG-TDSON-8-34 (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +175°C (junction, automotive grade) | -55°C to +175°C |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| RoHS-Status | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | IAUC / OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET (Enhancement Mode) |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 100 A (package limited) |
| Continuous Drain Current (chip-limited) | — | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | — | 4.3 mΩ |
| Maximum Power Dissipation (P<sub>D</sub>) | — | 125 W (T<sub>C</sub>) |
| Pin-Anzahl | — | 8 |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | MSL1 (up to 260°C peak reflow) |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |
| Channel Mode | — | Enhancement |