IAUZ30N10S5L240ATMA1 vs IAUC100N08S5N043ATMA1 对比
详细并排对比 IAUZ30N10S5L240ATMA1 出自 Infineon 和 IAUC100N08S5N043ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ 量产中规格对比
| 参数 | IAUZ30N10S5L240ATMA1 | IAUC100N08S5N043ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.86 | $1.72 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| R_DS(on) max at V_GS=10V | 24 mΩ | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | — |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | — |
| Power Dissipation (P_D, Tc) | 45.5 W | — |
| 封装 | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | PG-TDSON-8-34 (SuperSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +175°C (junction, automotive grade) | -55°C to +175°C |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| RoHS 状态 | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | IAUC / OptiMOS 5 |
| 晶体管类型 | — | N-Channel MOSFET (Enhancement Mode) |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 100 A (package limited) |
| Continuous Drain Current (chip-limited) | — | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | — | 4.3 mΩ |
| Maximum Power Dissipation (P<sub>D</sub>) | — | 125 W (T<sub>C</sub>) |
| 引脚数量 | — | 8 |
| 湿敏等级（MSL） | — | MSL1 (up to 260°C peak reflow) |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |
| Channel Mode | — | Enhancement |