IAUZ40N06S5L050ATMA1 vs BSC036NE7NS3GATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ40N06S5L050ATMA1 von Infineon und BSC036NE7NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ AktivInfineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ40N06S5L050ATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,82 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | — |
| Drain Current at T<sub>j</sub> | 90 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 µA | — |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 71 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TSDSON-8-33 (TSDSON-8) | PG-TDSON-8-7 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | — |
| Automotive Qualification | AEC-Q100 qualified | — |
| RoHS-Status | Compliant | ROHS3 Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| On-Resistance (RDS(on) max @ VGS=10V) | — | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | — | 45 nC |
| Rise Time (tr typ) | — | 13 ns |
| Fall Time (tf typ) | — | 11 ns |
| Power Dissipation (PD max, Tc=25C) | — | 156 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.8 C/W |
| Betriebstemperaturbereich | — | -55C to +175C |
| MSL-Level | — | 1 |