IAUZ40N06S5N050ATMA1 vs IAUZ40N06S5L050ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ40N06S5N050ATMA1 von Infineon und IAUZ40N06S5L050ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ40N06S5N050ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,71 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC) | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V | — |
| Maximum Power Dissipation (PD) | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (super-junction N-channel) |
| Channel Type | N-Channel Enhancement Mode | — |
| Gehäuse | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TSDSON-8-33 (TSDSON-8) |
| Pin-Anzahl | 8 | — |
| Montageart | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q100 qualified |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Packaging | Tape & Reel | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | — | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | — | 5 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | — | 6.4 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 2.2 V at 29 µA |
| Total Gate Charge Q<sub>G</sub> | — | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 71 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |