IAUZ40N06S5N050ATMA1 vs IAUZ40N06S5L050ATMA1 Comparación
Comparación detallada lado a lado de IAUZ40N06S5N050ATMA1 por Infineon y IAUZ40N06S5L050ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUZ40N06S5N050ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,71 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC) | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V | — |
| Maximum Power Dissipation (PD) | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (super-junction N-channel) |
| Channel Type | N-Channel Enhancement Mode | — |
| Encapsulado | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TSDSON-8-33 (TSDSON-8) |
| Recuento de pines | 8 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | — |
| Rango de temperatura de funcionamiento | -55C to +175C | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q100 qualified |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | — |
| Packaging | Tape & Reel | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | — | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | — | 5 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | — | 6.4 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 2.2 V at 29 µA |
| Total Gate Charge Q<sub>G</sub> | — | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 71 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |